상세정보
학술대회
Post-Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors
- 발행일
- 200805
- 출처
- Society for Information Display (SID) International Symposium 2008, pp.1243-1246
- 협약과제
- 07MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 cm2/Vs and the sub-threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga2O3, Al2O3, SiO2 and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations. © 2008 SID.
- KSP 제안 키워드
- Bottom gate, Co-Planar, IGZO TFTs, IGZO thin film, Organic and inorganic materials, Polymer materials, Post-annealing, Thin-Film Transistor(TFT), Two-step annealing, bias stability, field-effect mobility