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Conference Paper
P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors
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- Authors
- Doo-Hee Cho, Shin Hyuk Yang, Jae Heon Shin, Min-Ki Ryu, Woo-Seok Cheong, Chun Won Byun, Sung-Min Yoon, Sang-Hee Ko Park, Jeong Ik Lee, Chi-Sun Hwang, Hye-Yong Chu
- Issue Date
- 2008-05
- Citation
- Society for Information Display (SID) International Symposium 2008, pp.1243-1246
- Language
- English
- Type
- Conference Paper
- Abstract
- We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 cm2/Vs and the sub-threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga2O3, Al2O3, SiO2 and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations. © 2008 SID.
- KSP Keywords
- Bottom gate, Co-Planar, IGZO TFTs, IGZO thin film, Organic and inorganic materials, Polymer materials, Post-annealing, Thin-Film Transistor(TFT), Two-step annealing, bias stability, field-effect mobility