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Conference Paper Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM-OLED Display
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Authors
Sang-Hee Ko Park, Minki Ryu, Chi-Sun Hwang, Shin Hyuk Yang, Chun Won Byun, Jeong-Ik Lee, Jae heon Shin, Sung Min Yoon, Hye Yong Chu, Kyoung Ik Cho, Ki Moon Lee, Min Suk Oh, Seong Il Im
Issue Date
2008-05
Citation
Society for Information Display (SID) International Symposium 2008, pp.629-632
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1889/1.3069741
Project Code
08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
Abstract
We have fabricated 2.5" QCIF+ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V DS=25 V and VGS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light. © 2008 SID.
KSP Keywords
3 V, AM-OLED, Aperture ratio, Bias stress, Conductive oxide, Gate insulator, OLED display, Oxide electrodes, TFT array, Thin-Film Transistor(TFT), Visible Light