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Journal Article Preparation of V2O3 Thin Films by the Reduction of VO2 in a Very Low Pressure
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Authors
Sun Jin Yun, Byung-Gyu Chae, Jung Wook Lim, Jong-Su Noh, Hyun-Tak Kim
Issue Date
2008-04
Citation
Electrochemical and Solid-State Letters, v.11, no.7, pp.H173-H175
ISSN
1099-0062
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/1.2909475
Project Code
08MB3100, New electronic device using electric current jump, Hyun-Tak Kim
Abstract
V2 O3 films fabricated on (10 1- 0) or (1- 012) Al2 O3 substrates in a sol-gel process and subsequent annealing in a very low pressure exhibited an abrupt and large metal-insulator transition (MIT) near -104°C on heating. In this study, VO2 films initially formed by a sol-gel process were effectively reduced to V2 O3 at an annealing temperature of 550°C in a vacuum without reducing gases. The V2 O3 films exhibited resistance changes as large as 2× 104 -2× 105 due to MIT with annealing temperatures ranging from 550 to 650°C, which are much lower than the process temperature reported in earlier studies. © 2008 The Electrochemical Society.
KSP Keywords
Annealing temperature, As 2, Process temperature, Reducing gases, Resistance change, low pressure, metal-insulator transition, sol-gel process, thin film(TF)