상세정보
학술지
Preparation of V2O3 Thin Films by the Reduction of VO2 in a Very Low Pressure
- 발행일
- 200804
- 출처
- Electrochemical and Solid-State Letters, v.11 no.7, pp.H173-H175
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- V2 O3 films fabricated on (10 1- 0) or (1- 012) Al2 O3 substrates in a sol-gel process and subsequent annealing in a very low pressure exhibited an abrupt and large metal-insulator transition (MIT) near -104°C on heating. In this study, VO2 films initially formed by a sol-gel process were effectively reduced to V2 O3 at an annealing temperature of 550°C in a vacuum without reducing gases. The V2 O3 films exhibited resistance changes as large as 2× 104 -2× 105 due to MIT with annealing temperatures ranging from 550 to 650°C, which are much lower than the process temperature reported in earlier studies. © 2008 The Electrochemical Society.
- KSP 제안 키워드
- Annealing temperature, As 2, Process temperature, Reducing gases, Resistance change, low pressure, metal-insulator transition, sol-gel process, thin film(TF)