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Conference Paper
Electrical Stability of ZnO TFT during Gate-Bias Stress
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- Authors
- Tae-Hyun Kim, Sho-Yeon Kim, Jae-Hong Jeon, Hee-Hwan Choe, Kang-Woong Lee, Jong-Hyun Seo, Jae-Heon Shin, Sang-Hee Ko Park, Chi-Sun Hwang
- Issue Date
- 2008-05
- Citation
- Society for Information Display (SID) International Symposium 2008, pp.1250-1253
- Language
- English
- Type
- Conference Paper
- Project Code
- 08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- We fabricated TFTs with ZnO thin film as an active layer. Electrical bias stress test of ZnO TFT was also carried out. The results of stress test of ZnO TFT differed from those of a-Si:H TFT. Therefore, the instability of ZnO TFT cannot be explained by conventional degradation mechanisms of a-Si:H TFT. The variance of some factors in the fabrication process showed a certain trend in the results of bias stress. A possible mechanism of abnormal behavior under the gate bias stress was discussed. © 2008 SID.
- KSP Keywords
- Abnormal behavior, Active Layer, Electrical stability, Gate bias stress, Possible mechanism, Stress test, ZnO thin films, a-Si:H TFT, degradation mechanism, electrical bias, fabrication process