상세정보
학술대회
Electrical Stability of ZnO TFT during Gate-Bias Stress
- 발행일
- 200805
- 출처
- Society for Information Display (SID) International Symposium 2008, pp.1250-1253
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We fabricated TFTs with ZnO thin film as an active layer. Electrical bias stress test of ZnO TFT was also carried out. The results of stress test of ZnO TFT differed from those of a-Si:H TFT. Therefore, the instability of ZnO TFT cannot be explained by conventional degradation mechanisms of a-Si:H TFT. The variance of some factors in the fabrication process showed a certain trend in the results of bias stress. A possible mechanism of abnormal behavior under the gate bias stress was discussed. © 2008 SID.
- KSP 제안 키워드
- Abnormal behavior, Active Layer, Electrical stability, Gate bias stress, Possible mechanism, Stress test, ZnO thin films, a-Si:H TFT, degradation mechanism, electrical bias, fabrication process