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P‐28: ZnO TFTs Fabricated at Room Temperature by Solution Process
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- Authors
- Ji-Young Oh, Seung-Youl Kang, Chi-Sun Hwang, Gi-Hyun Kim, Seong Duk Ahn, Chul-Am Kim, Jae Bon Koo, Kyoung-Soo Suh, Hong-Ku Shim
- Issue Date
- 2008-05
- Citation
- Society for Information Display (SID) International Symposium 2008, pp.1274-1276
- Language
- English
- Type
- Conference Paper
- Abstract
- The ZnO nanorods TFT using solution process was investigated. The nanorods were well-chemically synthesized by ultrasonic methods and their length and diameter were adjusted to about 50??150nm and 5??15nm, respectively. The nanorods were coated onto SiO2 substrate by spin casting. The nanorods films were treated at room temperature condition. The device exhibits an on-to-off current ratio of 8.6 × 10 5 and a field mobility 2.1 cm 2 V-1 s-1. © 2008 SID.
- KSP Keywords
- Current ratio, First Stokes(S1), Off current, Room temperature, Spin-casting, Temperature conditions, Ultrasonic methods, ZnO nanorod, solution process