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Effects of Oxygen Concentration on the Electrical Properties of ZnO Films
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- Authors
- Hong Seung Kim, Eun Soo Jung, Won-Jae Lee, Jin Hyeok Kim, Sang-Ouk Ryu, Sung-Yool Choi
- Issue Date
- 2008-05
- Citation
- Ceramics International, v.34, no.4, pp.1097-1101
- ISSN
- 0272-8842
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Project Code
- 07SB1300, Development of Organic Materials for Organic Electronic Devices, Sung-Yool Choi
- Abstract
- In this paper, electrical characteristics by various oxygen content in ZnO films were studied. To control the oxygen content of ZnO films, post-thermal annealing was performed in N2 and air ambient, led to improve crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy. The ZnO films having the deficiency of oxygen showed the electron concentrations between 1021 and mid 6 × 1017 cm-3 and resistivity at 10-3-10-1 廓 cm. On the other hand, when the oxygen concentration of the ZnO films was up to the stoichiometry with Zn, the ZnO films showed low electron concentration at -1017 cm-3 and resistivity at 10 廓 cm. © 2007 Elsevier Ltd and Techna Group S.r.l.
- KSP Keywords
- Auger Electron Spectroscopy, Electron concentration, Optical properties of ZnO, Oxygen concentration, Oxygen content, Post-thermal annealing, ZnO films, air ambient, electrical characteristics, electrical properties(I-V curve), optical properties