ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article Effects of Oxygen Concentration on the Electrical Properties of ZnO Films
Cited 30 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
Authors
Hong Seung Kim, Eun Soo Jung, Won-Jae Lee, Jin Hyeok Kim, Sang-Ouk Ryu, Sung-Yool Choi
Issue Date
2008-05
Citation
Ceramics International, v.34, no.4, pp.1097-1101
ISSN
0272-8842
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.ceramint.2007.09.105
Project Code
07SB1300, Development of Organic Materials for Organic Electronic Devices, Sung-Yool Choi
Abstract
In this paper, electrical characteristics by various oxygen content in ZnO films were studied. To control the oxygen content of ZnO films, post-thermal annealing was performed in N2 and air ambient, led to improve crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy. The ZnO films having the deficiency of oxygen showed the electron concentrations between 1021 and mid 6 × 1017 cm-3 and resistivity at 10-3-10-1 廓 cm. On the other hand, when the oxygen concentration of the ZnO films was up to the stoichiometry with Zn, the ZnO films showed low electron concentration at -1017 cm-3 and resistivity at 10 廓 cm. © 2007 Elsevier Ltd and Techna Group S.r.l.
KSP Keywords
Auger Electron Spectroscopy, Electron concentration, Optical properties of ZnO, Oxygen concentration, Oxygen content, Post-thermal annealing, ZnO films, air ambient, electrical characteristics, electrical properties(I-V curve), optical properties