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Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules
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- Issue Date
- 2008-05
- Citation
- IEEE Transactions on Advanced Packaging, v.31, no.2, pp.351-356
- ISSN
- 1521-3323
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We have developed 40-Gb/s traveling-wave electroabsorption-modulator-integrated distributed feedback laser (TW-EML) modules using several advanced technologies. First, we have adopted a selective area growth (SAG) method in the fabrication of the 40-Gb/s EML device to provide active layers for the laser and the electroabsorption modulators (EAMs) simultaneously. The fabricated device shows that the measured 3-dB bandwidth of electrical-to-optical (E/O) response reaches about 45 GHz and the return loss (S11) is kept below -10 dB up to 50 GHz. For the module design of the device, we mainly considered electrical and optical factors. The measured S11 of the fabricated 40 Gb/s TW-EML module is below -10 dB up to about 30 GHz and the 3-dB bandwidth of the E/O response reaches over 35 GHz. We also have developed two types of coplanar waveguide (CPW) for the application of the driver amplifier integrated 40 Gb/s TW-EML module, which is a system-on-package (SoP) composed of an EML device and a driver amplifier device in a module. The measured S11 of the two-step-bent CPW is below -10 dB up to 35 GHz and the measured S11 of the parallel type CPW is below -10 dB up to 39 GHz. © 2008 IEEE.