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Growth of thin Si oxide in a cyclic oxygen plasma environment below 200°C
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- Authors
- Jae Hyun Moon, Yong-Hae Kim, Choong-Heui Chung, Su-Jae Lee, Dong-Jin Park, Yoon-Ho Song
- Issue Date
- 2008-08
- Citation
- Applied Surface Science, v.254, no.20, pp.6422-6427
- ISSN
- 0169-4332
- Publisher
- Elsevier Science, Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The growth of Si oxide by means of a cyclic radio-frequency (rf) plasma oxidation process has been explored in a low temperature range of 100-200 °C. The growth mechanism exhibits Cabrera-Mott (CM) oxidation, that is, the transport of mobile ionic species is assisted by an electric field. The low activation energy of 0.3 eV is attributed to the small size of O - and the assistance of the electric field. The oxide becomes off-stoichiometric as one approaches to the exterior surface of the oxide layer. © 2008 Elsevier B.V. All rights reserved.
- KSP Keywords
- Activation Energy, Cabrera-Mott, Ionic species, Low temperature(LT), Oxidation process, Oxide layer, Radio Frequency(RF), Si oxide, Temperature range, electric field, growth mechanism