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Journal Article Growth of Thin Si Oxide in a Cyclic Oxygen Plasma Environment Below 200 °C
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Authors
Jae Hyun Moon, Yong-Hae Kim, Choong-Heui Chung, Su-Jae Lee, Dong-Jin Park, Yoon-Ho Song
Issue Date
2008-08
Citation
Applied Surface Science, v.254, no.20, pp.6422-6427
ISSN
0169-4332
Publisher
Elsevier Science, Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.apsusc.2008.04.029
Project Code
07MB1600, Flexible Display, Cho Kyoung Ik
Abstract
The growth of Si oxide by means of a cyclic radio-frequency (rf) plasma oxidation process has been explored in a low temperature range of 100-200 °C. The growth mechanism exhibits Cabrera-Mott (CM) oxidation, that is, the transport of mobile ionic species is assisted by an electric field. The low activation energy of 0.3 eV is attributed to the small size of O - and the assistance of the electric field. The oxide becomes off-stoichiometric as one approaches to the exterior surface of the oxide layer. © 2008 Elsevier B.V. All rights reserved.
KSP Keywords
Activation Energy, Cabrera-Mott, Ionic species, Low temperature(LT), Oxidation process, Oxide layer, Radio Frequency(RF), Si oxide, Temperature range, electric field, growth mechanism