상세정보
학술지
Growth of Thin Si Oxide in a Cyclic Oxygen Plasma Environment Below 200 °C
- 발행일
- 200808
- 출처
- Applied Surface Science, v.254 no.20, pp.6422-6427
- ISSN
- 0169-4332
- 출판사
- Elsevier Science, Elsevier
- 협약과제
- 07MB1600, Flexible 디스플레이, 조경익
- 초록
- The growth of Si oxide by means of a cyclic radio-frequency (rf) plasma oxidation process has been explored in a low temperature range of 100-200 °C. The growth mechanism exhibits Cabrera-Mott (CM) oxidation, that is, the transport of mobile ionic species is assisted by an electric field. The low activation energy of 0.3 eV is attributed to the small size of O - and the assistance of the electric field. The oxide becomes off-stoichiometric as one approaches to the exterior surface of the oxide layer. © 2008 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Activation Energy, Cabrera-Mott, Ionic species, Low temperature(LT), Oxidation process, Oxide layer, Radio Frequency(RF), Si oxide, Temperature range, electric field, growth mechanism