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A Resistive Switch Device Based on SbTeN Chalcogenide Film
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- Issue Date
- 2008-06
- Citation
- Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- To meet the needs of the next-generation programmable switch circuit, we propose a SbTeN-based resistive switch device, which unifies the functions of the pass transistor and the SRAM-cell, has non-volatility, and passes endurance specification. By adding an optimum nitrogen-content in a SbTe film, the on-resistance reduction is successfully demonstrated, which is considered to be the first solution to meet the needs for low-power consumption.
- KSP Keywords
- Chalcogenide films, Next-generation, Non-volatility, ON-resistance, Resistance reduction, Resistive switch, Switch circuit, low power consumption, pass transistor