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Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers
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- 발행일
- 200806
- 출처
- Journal of the Electrochemical Society, v.155 no.6, pp.H421-H425
- ISSN
- 0013-4651
- 출판사
- Electrochemical Society (ECS)
- KSP 제안 키워드
- Heating layers, Non-Volatile Memory(NVM), Phase Change Material(PCM), Ti-Si-N, memory device