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학술지 X-Band 100 W Solid-State Power Amplifier Using a 0.25 μM GaN HEMT Technology
Cited 6 time in scopus Download 4 time Share share facebook twitter linkedin kakaostory
저자
강동민, 임종원, 안호균, 김성일, 김해천, 윤형섭, 권용환, 남은수
발행일
201501
출처
Microwave and Optical Technology Letters, v.57 no.1, pp.212-216
ISSN
0895-2477
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/mop.28814
협약과제
14ZB1100, 수요자 중심 화합물 반도체 부품산업기반강화, 강동민
초록
This article describes the successful development and the performance of X-band 100 W pulsed SSPA using a 25 W GaN-on-SiC high electron mobility transistor (HEMT). The GaN HEMT with a gate length of 0.25 mm and a total gate width of 8 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 25 W output power operated at 30 V drain voltage in continuous wave (CW)-operation with a power added efficiency of 43% at X-band. It also shows a maximum output power density of 3 W/mm. The X-band pulsed SSPA exhibited an output power of 100 W (50 dBm) with a power gain of 53 dB in a frequency range of 9.2-9.5 GHz. This 25 W GaN HEMT and X-band 100 W pulsed SSPA are suitable for the radar systems and related applications in X-band.
키워드
GaN, HEMT, SSPA, X-band
KSP 제안 키워드
9.5 GHZ, Drain voltage, Frequency Range, GaN HEMT technology, GaN on SiC, Gate Width, High electron mobility transistor(HEMT), Output power density, Power added efficiency(PAE), Power gain, Radar System