상세정보
학술지
X-Band 100 W Solid-State Power Amplifier Using a 0.25 μM GaN HEMT Technology
- 발행일
- 201501
- 출처
- Microwave and Optical Technology Letters, v.57 no.1, pp.212-216
- ISSN
- 0895-2477
- 출판사
- John Wiley & Sons
- 협약과제
- 14ZB1100, 수요자 중심 화합물 반도체 부품산업기반강화, 강동민
- 초록
- This article describes the successful development and the performance of X-band 100 W pulsed SSPA using a 25 W GaN-on-SiC high electron mobility transistor (HEMT). The GaN HEMT with a gate length of 0.25 mm and a total gate width of 8 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 25 W output power operated at 30 V drain voltage in continuous wave (CW)-operation with a power added efficiency of 43% at X-band. It also shows a maximum output power density of 3 W/mm. The X-band pulsed SSPA exhibited an output power of 100 W (50 dBm) with a power gain of 53 dB in a frequency range of 9.2-9.5 GHz. This 25 W GaN HEMT and X-band 100 W pulsed SSPA are suitable for the radar systems and related applications in X-band.
- 키워드
- GaN, HEMT, SSPA, X-band
- KSP 제안 키워드
- 9.5 GHZ, Drain voltage, Frequency Range, GaN HEMT technology, GaN on SiC, Gate Width, High electron mobility transistor(HEMT), Output power density, Power added efficiency(PAE), Power gain, Radar System