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X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology
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- Authors
- Dong Min Kang, Jong Won Lim, Ho Kyun Ahn, Sung Il Kim, Hae Cheon Kim, Hyung Sup Yoon, Yong Hwan Kwon, Eun Soo Nam
- Issue Date
- 2015-01
- Citation
- Microwave and Optical Technology Letters, v.57, no.1, pp.212-216
- ISSN
- 0895-2477
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- This article describes the successful development and the performance of X-band 100 W pulsed SSPA using a 25 W GaN-on-SiC high electron mobility transistor (HEMT). The GaN HEMT with a gate length of 0.25 mm and a total gate width of 8 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 25 W output power operated at 30 V drain voltage in continuous wave (CW)-operation with a power added efficiency of 43% at X-band. It also shows a maximum output power density of 3 W/mm. The X-band pulsed SSPA exhibited an output power of 100 W (50 dBm) with a power gain of 53 dB in a frequency range of 9.2-9.5 GHz. This 25 W GaN HEMT and X-band 100 W pulsed SSPA are suitable for the radar systems and related applications in X-band.
- KSP Keywords
- 9.5 GHZ, Drain voltage, Frequency range, GaN HEMT technology, GaN on SiC, Gate Width, High-electron mobility transistor(HEMT), Output power density, Power added efficiency(PAE), Power gain, Radar system