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LiNbO3LiNbO3 강유전체를 이용한 MFISFET의 제작 및 특성
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- Authors
- 정순원, 구경완
- Issue Date
- 2008-06
- Citation
- 전기학회논문지 P, v.57, no.2, pp.135-139
- ISSN
- 1229-800x
- Publisher
- 대한전기학회 (KIEE)
- Language
- Korean
- Type
- Journal Article
- Project Code
- 07IB2200, 강유전체 박막재료의 특성연구, Byoung Gon Yu
- Abstract
- - MFISFETs with platinum electrode on the LiNbO3/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. ID-VG characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of LiNbO3 films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[cm2/Vs] and 0.16[mS/mm], respectively. The drain current of 27[μA] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of 1.5[V], which means the memory operation of the MFISFET.
- KSP Keywords
- Aluminum Nitride(AlN), Drain current, Drain voltage, Field-effect electron mobility, Orders of magnitude, Platinum electrode, Threshold voltage shift, ferroelectric nature, gate voltage, hysteresis loop, memory window