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학술지 X-Band MMIC Low-Noise Amplifier MMIC on SiC Substrate Using 0.25-μm ALGaN/GaN HEMT Technology
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저자
장우진, 전계익, 박영락, 문재경
발행일
201401
출처
Microwave and Optical Technology Letters, v.56 no.1, pp.96-99
ISSN
0895-2477
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/mop.28044
협약과제
13VB1700, 차세대 데이터센터용 에너지절감 반도체 기술, 남은수
초록
In this article, we demonstrate a 9.7-12.9-GHz monolithic microwave integrated circuit low-noise amplifier (LNA) designed and fabricated using a AlGaN/GaN 0.25-μm high-electron mobility transistor on silicon carbide (SiC) technology. Microstriplines are used for matching circuits, except for the MIM capacitors acting as DC blocks in the matching circuits of the LNA circuit. The matching and bias circuits of the LNA are merged and meandered to simplify the structure of the amplifier and reduce the chip size. The LNA shows a noise figure of 1.7-2.1 dB with a small-signal gain of 20-26 dB and an isolation of 45-52 dB across the 9.7-12.9 GHz frequency range. Under continuous wave conditions, a saturated output power of 34 dBm is shown at 11.2 GHz, and an output third-order intercept point of 42 dBm is also achieved at 11.4 GHz. © 2014 Wiley Periodicals, Inc.
키워드
gallium nitride, low-noise amplifier, microwave monolithic integrated circuit
KSP 제안 키워드
AlGaN/GaN HEMTs, Frequency Range, GaN HEMT technology, Gallium Nitride(GaN), High electron mobility transistor(HEMT), Intercept point(IIP3), MIM capacitor, Microwave monolithic integrated circuits(MMIC), Noise Figure(NF), Saturated output power, SiC substrate