상세정보
학술대회
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
- 발행일
- 200806
- 출처
- Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2
- 협약과제
- 08MB1800, 유비쿼터스 단말용 부품 모듈, 김종대
- 초록
- Various sizes of erbium silicided n-/p-type Schottky barrier MOSFETs are manufactured from 20um to 7mn. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the control of the Schottky barrier height between silicon and ErSi1.7 is the key factor for the increase of drive current. N-type SOl substrate and strained silicon have very low electron Schottky barrier height. The manufactured 20nm n-/p-type SB-MOSFET showed 550 and 250uA/um saturation current at VGS-V T=VDS=2V condition (Tox=5nm) with excellent short channel characteristics, which is the highest current level compared with reported data. Also, 100nm and sub 100nm SB-MOSFETs characteristics are obtained.
- KSP 제안 키워드
- Channel Characteristics, Drive Current, High performance, Key factor, N-type, SB-MOSFET, Schottky barrier height, Short channel, Strained Silicon, V t, p-Type