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Simulation technique for ACLR of a class‐S power amplifier with a delta‐sigma modulator
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- Authors
- Sung Jun Lee, Jae Ho Jung, Kwang Chun Lee
- Issue Date
- 2014-02
- Citation
- Microwave and Optical Technology Letters, v.56, no.2, pp.462-465
- ISSN
- 0895-2477
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- A simulation technique for an adjacent channel leakage ratio (ACLR) of a class-S power amplifier (PA) with a delta-sigma modulator is proposed. This technique is based on three basic points. The first is a proper baseband signal, which must provide a fairly better ACLR than the target value of a PA as well as a tolerable total amount of time that can be handled by a transient circuit simulation. The second point is a carrier frequency adjustment for the observations free from spectrum leakage distortion due to a limited total amount of simulated time. The last is an ACLR calculation using only a steady-state output. © 2014 Wiley Periodicals, Inc.
- KSP Keywords
- Adjacent channel leakage ratio(ACLR), Carrier frequency, Class-S power amplifier, Delta-Sigma Modulator, Frequency adjustment, Simulation technique, Transient circuit, baseband signal, circuit simulation, power amplifiers(PAs), spectrum leakage