상세정보
학술지
Simulation Technique for ACLR of a Class-S Power Amplifier with a Delta-Sigma Modulator
- 발행일
- 201402
- 출처
- Microwave and Optical Technology Letters, v.56 no.2, pp.462-465
- ISSN
- 0895-2477
- 출판사
- John Wiley & Sons
- 협약과제
- 13VI1600, 차세대 이동통신 기지국용 Class-S 전력증폭기 기술 연구, 정재호
- 초록
- A simulation technique for an adjacent channel leakage ratio (ACLR) of a class-S power amplifier (PA) with a delta-sigma modulator is proposed. This technique is based on three basic points. The first is a proper baseband signal, which must provide a fairly better ACLR than the target value of a PA as well as a tolerable total amount of time that can be handled by a transient circuit simulation. The second point is a carrier frequency adjustment for the observations free from spectrum leakage distortion due to a limited total amount of simulated time. The last is an ACLR calculation using only a steady-state output. © 2014 Wiley Periodicals, Inc.
- KSP 제안 키워드
- Adjacent channel leakage ratio(ACLR), Carrier frequency, Class-S power amplifier, Delta-Sigma Modulator, Frequency adjustment, Simulation technique, Transient circuit, baseband signal, circuit simulation, power amplifiers(PAs), spectrum leakage