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Journal Article InGaAsP/InP Buried-Ridge Waveguide Laser with Improved Lateral Single-Mode Property
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Authors
Su Hwan Oh, Ki Soo Kim, Oh Kee Kwon, Kwang Ryong Oh
Issue Date
2008-06
Citation
ETRI Journal, v.30, no.3, pp.480-482
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.4218/etrij.08.0208.0026
Abstract
A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA.
KSP Keywords
Injection current, Laser diode(LD), Lateral mode, Ridge waveguides(RWs), Single-mode laser, Single-mode operation, active region, beam steering, junction plane, ridge waveguide laser, ridge width