상세정보
학술지
InGaAsP/InP Buried-Ridge Waveguide Laser with Improved Lateral Single-Mode Property
- 발행일
- 200806
- 출처
- ETRI Journal, v.30 no.3, pp.480-482
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 06MB1900, 광엑세스용 광집적 모듈, 오광룡
- 초록
- A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA.
- KSP 제안 키워드
- Injection current, Laser diode(LD), Lateral mode, Ridge waveguides(RWs), Single-mode laser, Single-mode operation, active region, beam steering, junction plane, ridge waveguide laser, ridge width