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Conference Paper Metal-Insulator Transition Mechanism and Sensors Using Mott Insulator VO2
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Authors
Hyun-Tak Kim
Issue Date
2013-09
Citation
NATO Advanced Research Workshop on Nanotechnology in the Security Systems 2013, v.NATO SPC C, pp.205-214
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1007/978-94-017-9005-5_18
Abstract
We present on-going issues on the metal-insulator transition (MIT) and demonstrate the Mott MIT (Mott transition) for an insulator, VO2, with the metallic electronic structure, 3d1. Previously, the exciton-hole-carrier-driven first-order MIT theory is introduced and experimental evidence is exhibited. In particular, we show the temperature dependences of coherent phonons and I-V curves and the MIT measured in metamaterial, and the divergence of the effective mass analyzed by optical method etc. Moreover, a MIT sensor using the Mott MIT is proposed. The MIT sensor will be attracted as a next-generation sensor with very high sensitivity.
KSP Keywords
Coherent phonon, Effective mass, Electronic structures, First order, High Sensitivity, I-V curves, Initialization Vector(IV), Mott insulator, Mott transition, Next-generation, Optical method