상세정보
학술지
Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
- 저자
- 김만수, 민남기, 윤선진, 이현우, Alexander M, 권광호
- 발행일
- 200806
- 출처
- ETRI Journal, v.30 no.3, pp.383-393
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- The etching mechanism of ZrO2thin films and etch selectivity over some materials in both BCl3/Ar and BCl3/CHF3/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In BCl3/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, BCl2, and BCl2+. In this work, it is shown that the nonmonotonic behavior of the ZrO2etch rate as a function of the BCl3/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% CHF3to the BCl3-rich BCl3/Ar plasma does not influence the ZrO2etch rate, but it non-monotonically changes the etch rates of both Si and SiO2. The last effect can probably be associated with the corresponding behavior of the F atom density.
- KSP 제안 키워드
- Ar plasma, Etch mechanism, Etch rates, Etch selectivity, Gas mixing, Inductively coupled, Langmuir probe diagnostics, Mixing ratio, Model-based analysis, Modeling method, active species