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Detail
Journal Article
Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
- Authors
- Man Su Kim, Nam Ki Min, Sun Jin Yun, Hyun Woo Lee, Alexander M. Efremov, Kwang Ho Kwon
- Issue Date
- 2008-06
- Citation
- ETRI Journal, v.30, no.3, pp.383-393
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- The etching mechanism of ZrO2thin films and etch selectivity over some materials in both BCl3/Ar and BCl3/CHF3/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In BCl3/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, BCl2, and BCl2+. In this work, it is shown that the nonmonotonic behavior of the ZrO2etch rate as a function of the BCl3/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% CHF3to the BCl3-rich BCl3/Ar plasma does not influence the ZrO2etch rate, but it non-monotonically changes the etch rates of both Si and SiO2. The last effect can probably be associated with the corresponding behavior of the F atom density.
- KSP Keywords
- Ar plasma, Etch Selectivity, Etch mechanism, Etch rates, Gas mixing, Inductively coupled, Langmuir probe diagnostics, Mixing ratio, Model-based analysis, Modeling method, active species