상세정보
학술지
Chalcogenide Thin-Film Transistors using Oxygenated n-type and p-type Phase Change Materials
- 발행일
- 200807
- 출처
- Applied Physics Letters, v.93 no.4, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 07SK1200, 뉴런 및 수용체와 반도체 소자의 하이브리드 네트워크, 정명애
- 초록
- A technique for chalcogenide thin-film transistors (ChG-TFT) using oxygenated (Ox) n -type and p -type phase change materials is developed. By the oxygen doping into Ge2 Sb2 Te5 (GST) in a range of 10%-35%, the oxygen impurities induced by destabilization of the electron killers in GST and resultantly n -type Ox-GST was realized. For a p -type Ox-GST, by GeTe deposition with GeTe/Ox-GST ratio more than 0.3 and subsequent thermal diffusion, the diffused film showed the p -type conductivity. With n -type and p -type Ox-GST films, the doped ChG-TFTs were developed. The rectification ratio was ~ 103 at +5 V, and was increased by the p-n junction structure. © 2008 American Institute of Physics.
- KSP 제안 키워드
- Junction structure, Oxygen Doping, Oxygen impurities, P-N junction, Petri net(PN), Phase Change Material(PCM), Thermal diffusion, Thin-Film Transistor(TFT), n-type and p-type, p-type conductivity, rectification ratio