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Chalcogenide Thin-Film Transistors using Oxygenated n-type and p-type Phase Change Materials
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- Authors
- Ki-Bong Song, Sung-Won Sohn, Jun Ho Kim, Kyung-Am Kim, Kyu Man Cho
- Issue Date
- 2008-07
- Citation
- Applied Physics Letters, v.93, no.4, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Project Code
- 07SK1200, Interfacing of Neurons and Receptors with Semiconductor Devices, Chung Myung-Ae
- Abstract
- A technique for chalcogenide thin-film transistors (ChG-TFT) using oxygenated (Ox) n -type and p -type phase change materials is developed. By the oxygen doping into Ge2 Sb2 Te5 (GST) in a range of 10%-35%, the oxygen impurities induced by destabilization of the electron killers in GST and resultantly n -type Ox-GST was realized. For a p -type Ox-GST, by GeTe deposition with GeTe/Ox-GST ratio more than 0.3 and subsequent thermal diffusion, the diffused film showed the p -type conductivity. With n -type and p -type Ox-GST films, the doped ChG-TFTs were developed. The rectification ratio was ~ 103 at +5 V, and was increased by the p-n junction structure. © 2008 American Institute of Physics.
- KSP Keywords
- Junction structure, Oxygen Doping, Oxygen impurities, P-N junction, Petri net(PN), Phase Change Material(PCM), Thermal diffusion, Thin-Film Transistor(TFT), n-type and p-type, p-type conductivity, rectification ratio