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Journal Article
Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors
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- Authors
- Seung-Yun Lee, Chendong Zhu, John D. Cressler, Sang-Heung Lee
- Issue Date
- 2008-07
- Citation
- Japanese Journal of Applied Physics, v.47, no.7, pp.5309-5313
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- The variation of mixed-mode reliability degradation with emitter scaling in silicon-germanium heterojunction bipolar transistors was investigated. While base current density (Jb) after reverse emitter-base stress increased with increasing perimeter-to-area (P/A) ratio, Jb exhibited a reverse behavior in the case of mixed-mode stress. In addition, the up and down variation of Jb was observed with increasing stress time in some devices of very small P/A ratios. It is considered that these phenomena resulted from self-heating effect depending on device size. © 2008 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Device size, Hetero-junction Bipolar Transistor(HBT), Mixed-mode stress, Self-heating effect(SHE), Silicon-germanium(SiGe), current density