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New fabrication of a strained Si/Si1−yGey dual channel on a relaxed Si1−xGex virtual substrate using a Ge-rich layer formed by oxidation
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- Authors
- Sang-Hoon Kim, Hyun-Cheol Bae, Sang-Heung Lee
- Issue Date
- 2008-07
- Citation
- Applied Surface Science, v.254, no.19, pp.6025-6029
- ISSN
- 0169-4332
- Publisher
- Elsevier Science, Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- This paper presents a new method of forming a Si/SiGe dual channel on a Si 0.8 Ge 0.2 virtual substrate. Generally, in a CMOS process using a Si/SiGe dual channel, due to several processes involving ion-implantation, annealing and dry-etching after the deposition of the Si/SiGe dual channel, the surface can be damaged, leading to reduced electrical properties. However, if the dual channel is formed during a specific stage of the CMOS process, the defects of the dual channel can be reduced and the thermal stability will be excellent. Therefore, in this paper, a method for minimizing the defects of the dual channel is presented. This method uses the segregation of the Ge in the oxidation process of a SiGe. A Si/SiGe dual channel formed using this method achieved results that were identical to a dual channel deposited using the chemical vapor deposition (CVD) method. © 2008 Elsevier B.V. All rights reserved.
- KSP Keywords
- CMOS Process, Chemical Vapor Deposition, Electrical properties, Ion Implantation, Strained-Si, Virtual substrate, dry etching, dual-channel, new method, oxidation process, thermal stability