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Journal Article Electrostatic Modification of Infrared Response in Gated Structures based on VO2
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Authors
M. M. Qazilbash, Z. Q. Li, V. Podzorov, M. Brehm, F. Keilmann, B. G. Chae, H. T. Kim, D. N. Basov
Issue Date
2008-06
Citation
Applied Physics Letters, v.92, no.24, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2939434
Project Code
08MB3100, New electronic device using electric current jump, Hyun-Tak Kim
Abstract
We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage. © 2008 American Institute of Physics.
KSP Keywords
Charge carriers, Correlated insulator, Electrostatic doping, Field-effect transistors(FETs), Metallic islands, Transition regime, gate dielectric, gate voltage, infrared absorption, insulator-to-metal transition, vanadium dioxide