상세정보
학술지
Electrostatic Modification of Infrared Response in Gated Structures based on VO2
- 발행일
- 200806
- 출처
- Applied Physics Letters, v.92 no.24, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage. © 2008 American Institute of Physics.
- KSP 제안 키워드
- Charge carriers, Correlated insulator, Electrostatic doping, Field-effect transistors(FETs), Metallic islands, Transition regime, gate dielectric, gate voltage, infrared absorption, insulator-to-metal transition, vanadium dioxide