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학술지 A 0.13 μm CMOS UWB RF Transmitter with an On-Chip T/R Switch
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저자
김창완, Quoc, 이승식, 이상국
발행일
200808
출처
ETRI Journal, v.30 no.4, pp.526-534
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.08.0107.0201
협약과제
08MC2200, 초고속 멀티미디어 전송 UWB 솔루션 개발, 최상성
초록
This paper presents a fully integrated 0.13 μm CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.
키워드
CMOS, LPF, MB-OFDM, Mixer, RFIC, T/R switch, Transmitter, Ultra-wideband, UWB, VGA
KSP 제안 키워드
3-dB bandwidth, 5 GHz, Band center, CMOS Technology, Center frequency, Driver Amplifier, Frequency Range, Fully integrated, Gain flatness, Low Pass Filter, MB-OFDM UWB