상세정보
학술지
RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach-Zehnder Modulator
- 발행일
- 200808
- 출처
- IEEE Photonics Technology Letters, v.20 no.16, pp.1384-1386
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V? L? of 1.88 × 10-2V쨌cm which is nearly 350 times smaller than those of previously reported LiNbO3-based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results. © 2008 IEEE.
- KSP 제안 키워드
- Mach-Zehnder(MZ), PIN Diode, Phase shift, RF frequency, Theoretical Analysis, frequency doubling, refractive index, time-domain