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Journal Article RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach–Zehnder Modulator
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Authors
Jeong-Woo Park, Jong-Bum You, Jong-Moo Lee, Gyung Ock Kim
Issue Date
2008-08
Citation
IEEE Photonics Technology Letters, v.20, no.16, pp.1384-1386
ISSN
1041-1135
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LPT.2008.926831
Abstract
We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V? L? of 1.88 × 10-2V쨌cm which is nearly 350 times smaller than those of previously reported LiNbO3-based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results. © 2008 IEEE.
KSP Keywords
Mach-Zehnder(MZ), PIN Diode, Phase shift, RF frequency, Theoretical Analysis, frequency doubling, refractive index, time-domain