상세정보
학술지
Investigation of the Effect of Calcination Temperature on HMDS-treated Ordered Mesoporous Silica Film
- 발행일
- 200810
- 출처
- Journal of Colloid and Interface Science, v.326 no.1, pp.186-190
- ISSN
- 0021-9797
- 출판사
- Elsevier
- 협약과제
- 08MB1900, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
- 초록
- To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment. HMDS treatment substituted {single bond}OH with {single bond}Si(CH3)3 groups on the silica surface. After treatment, ordered mesoporous silica films were calcined at various calcination temperatures, and the calcination temperature to obtain optimal structural, electrical, and mechanical properties was determined to be approximately 300 °C. © 2008 Elsevier Inc. All rights reserved.
- KSP 제안 키워드
- After treatment, Brij-76, Calcination temperature, Intermetal dielectric(IMD), Low dielectric constant, Mechanical properties(PMCs), Ordered mesoporous silica film, Signal delay, Surface-modified, Ultra-large-scale integrated circuits, block copolymer