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학술지 New Approach to the Growth of SiOx Nanowire Bunch using Au Catalyst and SiNx Film on Si Substrate
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저자
박래만, 박현규, 최철종, 김상우, 맹성렬
발행일
200809
출처
Physica E : Low-dimensional Systems and Nanostructures, v.40 no.10, pp.3170-3172
ISSN
1386-9477
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.physe.2008.05.008
협약과제
06MB4700, 차세대 고성능 광전자소자 및 스마트 생화학 센서 구현을 위한 IT-BT-NT 융합 핵심기술 개발, 맹성렬
초록
SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch. © 2008 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Ar flow, Au catalyst, Catalytic metal, New approach, Scanning electron microscopy(S.E.M.), Si source, Si substrate, Transmission Electron Microscopy(TEM), energy dispersive X-ray spectroscopy(EDX), field emission scanning electron microscopy(FESEM), initial growth