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Journal Article
New Approach to the Growth of SiOx Nanowire Bunch using Au Catalyst and SiNx Film on Si Substrate
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- Authors
- Nae-Man Park, Hyun-Kyu Park, Chel-Jong Choi, Sang-Woo Kim, Sung Lyul Maeng
- Issue Date
- 2008-09
- Citation
- Physica E : Low-dimensional Systems and Nanostructures, v.40, no.10, pp.3170-3172
- ISSN
- 1386-9477
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch. © 2008 Elsevier B.V. All rights reserved.
- KSP Keywords
- Ar flow, Au catalyst, Catalytic metal, New approach, Scanning electron microscopy(S.E.M.), Si source, Si substrate, Transmission Electron Microscopy(TEM), energy dispersive X-ray spectroscopy(EDX), field emission scanning electron microscopy(FESEM), initial growth