상세정보
학술지
Influence of a Transparent SiCN Doping Layer on Performance of Silicon Nanocrystal LEDs
- 발행일
- 200808
- 출처
- Electrochemical and Solid-State Letters, v.11 no.11, pp.H296-H299
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 08ZB1400, 유비쿼터스 라이프케어 원천요소기술 개발, 박선희
- 초록
- We have investigated the effects of a transparent SiCN doping layer on electrical and optical performance of silicon nanocrystal (nc-Si) light-emitting diodes (LEDs). The optical bandgap of SiCN doping layer shifted to a shorter wavelength with increasing N composition into the SiCN doping layer, which was estimated from 2.2 to 2.6 eV by applying the Tauc model. The electrical property of the nc-Si LED by employing a transparent SiCN doping layer was enhanced compared to that of the nc-Si LED with a SiC doping layer. This could be attributed to a reduction in the tunnel barrier of electrons into the nc-Si from the doping layer due to the higher bandgap of the SiCN doping layer than the SiC doping layer. In addition, the power conversion efficiency (output powerinput power) was also improved by 41%. The results suggested that a transparent SiCN doping layer was a very effective way to improve the performance of nc-Si LEDs. Moreover, we demonstrated the 8×8 μ -LED array with stable and uniform light emission. © 2008 The Electrochemical Society.
- KSP 제안 키워드
- Conversion efficiency(C.E.), LED array, Light Emission, Light-emitting diodes (leds), Nc-Si, Optical band gap, Si LED, Silicon nanocrystals(Si NCs), Tunnel barrier, Uniform light, electrical properties(I-V curve)