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Growth of Silicon Nanowires in Aqueous Solution under Atmospheric Pressure
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- Authors
- Nae-Man Park, Chel-Jong Choi
- Issue Date
- 2014-06
- Citation
- Nano Research, v.7, no.6, pp.898-902
- ISSN
- 1998-0124
- Publisher
- Tsinghua Univ Press, Springer
- Language
- English
- Type
- Journal Article
- Abstract
- A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85 °C under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature. [Figure not available: see fulltext.] © 2014 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
- KSP Keywords
- Aqueous solution, As-grown, Crystalline silicon, Energy-Dispersive X-ray Spectrometry(EDXS), Low temperature(LT), Metal catalyst, Raman spectroscopy, Scanning electron microscopy(S.E.M.), Silicon nanowires(SiNWs), Silicon precursor, Transmission Electron Microscopy(TEM)