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The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process
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- Authors
- Jong-Chang Woo, Chang-Auck Choi, Chang-Il Kim
- Issue Date
- 2014-02
- Citation
- Transactions on Electrical and Electronic Materials, v.15, no.1, pp.49-54
- ISSN
- 1229-7607
- Publisher
- 한국전기전자재료학회
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to SiO2 in SF6/O2 plasma. The etch rate of the Si film was decreased on adding O2 gas, and the selectivity of Si to SiO2 was increased, on adding O2 gas to the SF6 plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of SF6/O2 (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products. © 2014 KIEEME. All rights reserved.
- KSP Keywords
- Etch characteristics, Etch rates, Etched surface, Etching process, Field emission Auger electron spectroscopy, Gas mixing, Inductively-coupled plasma(ICP), Mixing ratio, Si film, Silicon etching, Spectroscopy analysis