상세정보
학술대회
Ge-on-Si Photodetectors with 33 GHz Bandwidth Implemented by RPCVD
- 발행일
- 200809
- 출처
- European Conference on Optical Communication (ECOC) 2008, pp.1-2
- 협약과제
- 08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20μm-diameter at a wavelength of 1550 nm. © 2008 IEEE.
- KSP 제안 키워드
- 1550 nm, 3-dB bandwidth, Ge-on-Si, Window Size