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1/f Noise Characteristics of Sputtered Silicon Antimony Thin Film for Microbolometer
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- Authors
- Ho Jun Ryu, Se-In Kwon, Sang-Hoon Cheon, Woo Seok Yang, Seong Mok Cho, Byoung Gon Yu, Chang Auck Choi
- Issue Date
- 2008-09
- Citation
- Eurosensors 2008, pp.877-880
- Language
- English
- Type
- Conference Paper
- Abstract
- Silicon antimony films have been studied as resistor for uncooled microbolometer. We fabricated silicon films and their alloy films by sputtering and plasma-enhanced chemical vapor deposition. Silicon antimony films have a good TCR comparing to the VO 2 and very low levels of 1/f noise than PECVD Si films. It showed very high detectivity comparing PECVD Si film in calculation.
- KSP Keywords
- 1/f Noise, Alloy films, Noise characteristics, Plasma-enhanced chemical vapor deposition(PECVD), Si film, Silicon film, VO 2, high detectivity, thin film(TF), uncooled microbolometer