ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술대회 35 GHz Ge p-i-n Photodetectors Implemented Using RPCVD
Cited 5 time in scopus Download 2 time Share share facebook twitter linkedin kakaostory
저자
서동우, 김상훈, 주지호, 김경옥, 김인규
발행일
200809
출처
International Conference on Group IV Photonics (GFP) 2008, pp.191-193
DOI
https://dx.doi.org/10.1109/GROUP4.2008.4638141
협약과제
08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
초록
Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3V, dark current of 30 nA, and responsivity of 0.47 A/W for 20μm-diameter detectors. © 2008 IEEE.
KSP 제안 키워드
3.5 GHz, Dark Current, Ge photodetectors, p-i-n photodetectors