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35 GHz Ge p-i-n Photodetectors Implemented Using RPCVD
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- Authors
- Dong Woo Suh, Sang Hoon Kim, Ji Ho Joo, Gyung Ock Kim, In Gyoo Kim
- Issue Date
- 2008-09
- Citation
- International Conference on Group IV Photonics (GFP) 2008, pp.191-193
- Language
- English
- Type
- Conference Paper
- Abstract
- Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3V, dark current of 30 nA, and responsivity of 0.47 A/W for 20μm-diameter detectors. © 2008 IEEE.
- KSP Keywords
- 3.5 GHz, Dark Current, Ge photodetectors, p-i-n photodetectors