상세정보
학술대회
35 GHz Ge p-i-n Photodetectors Implemented Using RPCVD
- 발행일
- 200809
- 출처
- International Conference on Group IV Photonics (GFP) 2008, pp.191-193
- 협약과제
- 08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3V, dark current of 30 nA, and responsivity of 0.47 A/W for 20μm-diameter detectors. © 2008 IEEE.
- KSP 제안 키워드
- 3.5 GHz, Dark Current, Ge photodetectors, p-i-n photodetectors