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Conference Paper 35 GHz Ge p-i-n Photodetectors Implemented Using RPCVD
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Authors
Dong Woo Suh, Sang Hoon Kim, Ji Ho Joo, Gyung Ock Kim, In Gyoo Kim
Issue Date
2008-09
Citation
International Conference on Group IV Photonics (GFP) 2008, pp.191-193
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/GROUP4.2008.4638141
Project Code
08MB1600, Silicon-based high-speed optical interconnection IC, Kim Gyungock
Abstract
Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3V, dark current of 30 nA, and responsivity of 0.47 A/W for 20μm-diameter detectors. © 2008 IEEE.
KSP Keywords
3.5 GHz, Dark Current, Ge photodetectors, p-i-n photodetectors