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Journal Article
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
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- Issue Date
- 2011-08
- Citation
- Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity © 2011 American Scientific Publishers.
- KSP Keywords
- Barrier height(BH), Barrier height inhomogeneity, Charge carriers, Current conduction mechanisms, Electrical characteristics, Junction interface, Nickel silicide, Sb segregation, Schottky barrier height, Silicon junctions, Thermionic emission model