상세정보
학술지
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
- 발행일
- 201108
- 출처
- Journal of Nanoscience and Nanotechnology, v.11 no.8, pp.7339-7342
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 10ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 현창희
- 초록
- In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity © 2011 American Scientific Publishers.
- KSP 제안 키워드
- Barrier height inhomogeneity, Charge carriers, Current conduction mechanisms, Electrical characterization, Junction interface, N-type, Nickel silicide, Sb segregation, Schottky barrier height, Silicon junctions, Thermionic emission model