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Electrical Characterization of ZnO Single Nanowire Device for Chemical Sensor Application
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- Authors
- E. K. Kim, H.-Y. Lee, S. E. Moon, J. Park, S.-J. Park, J.-H. Kwak, S. Maeng, K.-H. Park, J. Kim, S. W. Kim, H. J. Ji, G. T. Kim
- Issue Date
- 2008-09
- Citation
- Journal of Nanoscience and Nanotechnology, v.8, no.9, pp.4698-4701
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. ZnO single nanowire device was ingenuously fabricated by combining conventional optical lithography and high resolution electron beam lithography and its current-voltage characteristics were measured with doing the post process to acquire reproducible performance as a chemical gas sensor. And its temperature dependent current-voltage characteristics were measured to investigate temperature dependant electrical transport. The ZnO nanowire device showed slightly non-ohmic current-voltage characteristics which may be due to back-to-back configuration of the diodes with the insulating contact barriers and showed an relatively small activation energy of 0.2 eV. To test our device as a chemical sensor, the NO 2 gas response was reported at the elevated temperature. Copyright © 2008 American Scientific Publishers All rights reserved.
- KSP Keywords
- Activation Energy, Au thin film, Back to Back(BTB), Chemical gas sensor, Chemical sensors, Electron beam lithography, Elevated temperatures, GaN epilayer, Gas response, High resolution, NO 2