상세정보
학술지
Electrical Characterization of ZnO Single Nanowire Device for Chemical Sensor Application
- 발행일
- 200809
- 출처
- Journal of Nanoscience and Nanotechnology, v.8 no.9, pp.4698-4701
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 07MB2600, 유비쿼터스 단말용 부품 모듈, 김종대
- 초록
- Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. ZnO single nanowire device was ingenuously fabricated by combining conventional optical lithography and high resolution electron beam lithography and its current-voltage characteristics were measured with doing the post process to acquire reproducible performance as a chemical gas sensor. And its temperature dependent current-voltage characteristics were measured to investigate temperature dependant electrical transport. The ZnO nanowire device showed slightly non-ohmic current-voltage characteristics which may be due to back-to-back configuration of the diodes with the insulating contact barriers and showed an relatively small activation energy of 0.2 eV. To test our device as a chemical sensor, the NO 2 gas response was reported at the elevated temperature. Copyright © 2008 American Scientific Publishers All rights reserved.
- KSP 제안 키워드
- Activation Energy, Au thin film, Chemical gas sensor, Electrical characterization, Electrical transport, GaN epilayer, Gas response, High-resolution, NO 2, Optical lithography, Post process