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Conference Paper
Red-shift of the Photoluminescence Peak of N-doped ZnO Phosphors
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- Authors
- Jun Kwan Kim, Jung Wook Lim, Hyun-Tak Kim, Sun Jin Yun
- Issue Date
- 2008-10
- Citation
- International Meeting on Information Display (IMID) 2008, pp.895-897
- Language
- English
- Type
- Conference Paper
- Abstract
- ZnO films were fabricated using rf-magnetron sputter deposition process with different N 2 ambient. N-content in N-doped ZnO films was less than 1%. The wavelength of the highest intensity PL peak of N-doped ZnO was shifted to higher wavelength with increasing N 2 flow rate in the deposition ambient. These results indicated that the optical property of ZnO was significantly affected by the defect level created by doping with a very small amount of N.
- KSP Keywords
- Defect level, Doped znO films, Flow rate, N 2, N-doped ZnO, RF-magnetron sputter deposition, Red-shift, deposition process, optical properties