상세정보
학술대회
Highly Stable ZnO TFT: Effect of Substrate Buffer Layer
- 발행일
- 200810
- 출처
- The Electrochemical Society (ECS) Meeting 2008, pp.297-302
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We presented effect of substrate buffer layer on the staggered ZnO TFT performance. Thermal oxide with smooth surface and negligible hydrogen amount forms good back channel with the ZnO active layer deposited by PEALD to result in high performance of ZnO TFT. On the other hand, PECVD SiO2 buffer layer generates some defects in the back channel and make PEALD ZnO have higher carrier density to result in much negatively shifted Von and reduced mobility of TFT. ZnO TFT having sputtered SiO2 as a buffer layer showed similar performance to that with thermal oxide. ©The Electrochemical Society.
- KSP 제안 키워드
- Active Layer, Buffer layer, Carrier density, High performance, Highly stable, Reduced mobility, Smooth surface, Thermal oxide, back channel