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Conference Paper
Highly Stable ZnO TFT: Effect of Substrate Buffer Layer
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- Authors
- Sang-Hee K. Park, Chi-Sun Hwang, Min Ki Ryu, Jae Heon Shin, Shin Hyuk Yang, Sung Min Yoon, Hye Yong Chu
- Issue Date
- 2008-10
- Citation
- The Electrochemical Society (ECS) Meeting 2008, pp.297-302
- Language
- English
- Type
- Conference Paper
- Project Code
- 08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
- Abstract
- We presented effect of substrate buffer layer on the staggered ZnO TFT performance. Thermal oxide with smooth surface and negligible hydrogen amount forms good back channel with the ZnO active layer deposited by PEALD to result in high performance of ZnO TFT. On the other hand, PECVD SiO2 buffer layer generates some defects in the back channel and make PEALD ZnO have higher carrier density to result in much negatively shifted Von and reduced mobility of TFT. ZnO TFT having sputtered SiO2 as a buffer layer showed similar performance to that with thermal oxide. ©The Electrochemical Society.
- KSP Keywords
- Active Layer, Buffer layer, Carrier density, High performance, Highly stable, Reduced mobility, Smooth surface, Thermal oxide, back channel