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학술대회 Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs
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저자
윤성민, 정우석, 황치선, 박상희, 조두희, 신재헌, 유민기, 변춘원, 이정익, 정승묵, 추혜용, 조경익
발행일
200810
출처
International Meeting on Information Display (IMID) 2008, pp.222-225
초록
We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-0 (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.
KSP 제안 키워드
Device characteristics, Etching process, Gas mixture, InGaZnO TFTs, Oxide TFTs, dry etching