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Conference Paper Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs
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Authors
S. M. Yoon, W. S. Cheong, C. S. Hwang, S. H. Ko Park, D. H. Cho, J. H. Shin, M. Ryu, C. W. Byun, S. Yang, J. I. Lee, S. M. Chung, H. Y. Chu, K. I. Cho
Issue Date
2008-10
Citation
International Meeting on Information Display (IMID) 2008, pp.222-225
Language
English
Type
Conference Paper
Project Code
08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
Abstract
We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-0 (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.
KSP Keywords
Device characteristics, Etching process, Gas mixture, InGaZnO TFTs, Oxide TFTs, dry etching