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학술대회
Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs
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- 발행일
- 200810
- 출처
- International Meeting on Information Display (IMID) 2008, pp.222-225
- 초록
- We proposed the dry etching process recipe for the fabrication of In-Ga-Zn-0 (IGZO)-based oxide TFTs, in which the etching behaviors of IGZO films were systematically investigated when the etching gas mixtures and their mixing ratios were varied. Good device characteristics of the fabricated TFT were successfully confirmed.
- KSP 제안 키워드
- Device characteristics, Etching process, Gas mixture, InGaZnO TFTs, Oxide TFTs, dry etching