ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술대회 A Fully Integrated 60 GHz SiGe BiCMOS Mixer
Cited 3 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
이상흥, 이자열, 김해천
발행일
200810
출처
European Microwave Integrated Circuits Conference (EuMIC) 2008, pp.410-413
DOI
https://dx.doi.org/10.1109/EMICC.2008.4772316
초록
In this paper, a 60 GHz MMIC down-conversion mixer for 60 GHz WPAN is designed and fabricated on chip using 0.25 μm SiGe:C BiCMOS process technology. This 60 GHz mixer is fully integrated on chip, including active input balun and output balun circuits. The results of the fabricated mixer measured at RF 60 GHz show conversion gain of 10.7 dB, LO to IF isolation and RF to IF isolation of above 30 dB, and input P1dB of -17 dBm. Also, the results of the fabricated mixer measured between RF 57 and 63 GHz show conversion gain of 12.0 ?? 10.7 dB, LO to IF isolation and RF to IF isolation of above 28 dB, and input P1dB of -17 ?? -18 dBm. The chip size of the manufactured mixer is 1.3 mm x 0.8 mm.
KSP 제안 키워드
60 GHz, BiCMOS process, Conversion gain, Down-conversion mixer, Fully integrated, SiGe BiCMOS, process technology