상세정보
학술대회
A Fully Integrated 60 GHz SiGe BiCMOS Mixer
- 발행일
- 200810
- 출처
- European Microwave Integrated Circuits Conference (EuMIC) 2008, pp.410-413
- 협약과제
- 08ZB1300, 실리콘-게르마늄 양자채널 나노 신소자 기술 연구, 이상흥
- 초록
- In this paper, a 60 GHz MMIC down-conversion mixer for 60 GHz WPAN is designed and fabricated on chip using 0.25 μm SiGe:C BiCMOS process technology. This 60 GHz mixer is fully integrated on chip, including active input balun and output balun circuits. The results of the fabricated mixer measured at RF 60 GHz show conversion gain of 10.7 dB, LO to IF isolation and RF to IF isolation of above 30 dB, and input P1dB of -17 dBm. Also, the results of the fabricated mixer measured between RF 57 and 63 GHz show conversion gain of 12.0 ?? 10.7 dB, LO to IF isolation and RF to IF isolation of above 28 dB, and input P1dB of -17 ?? -18 dBm. The chip size of the manufactured mixer is 1.3 mm x 0.8 mm.
- KSP 제안 키워드
- 60 GHz, BiCMOS process, Conversion gain, Down-conversion mixer, Fully integrated, SiGe BiCMOS, process technology