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Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
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- Authors
- Nae-Man Park, Jaeheon Shin, Bosul Kim, Kyung Hyun Kim, Woo-Seok Cheong
- Issue Date
- 2013-07
- Citation
- Electronic Materials Letters, v.9, no.4, pp.467-469
- ISSN
- 1738-8090
- Publisher
- Springer, 대한금속재료학회
- Language
- English
- Type
- Journal Article
- Abstract
- A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum dot film had a high optical transmittance of over 95% at 550 nm with a thickness of 50 nm. A large hysteresis curve was observed in a current-voltage measurement. When we increased the voltage sweep range, electrons were charged into the silicon quantum dots because of the electrical n-type channel in an oxide thin film transistor. © 2013 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
- KSP Keywords
- Current-Voltage measurements, In-Situ, Nonvolatile memory devices, Plasma-enhanced chemical vapor deposition(PECVD), Quantum dot(Qdot), Silicon nitride film, Silicon quantum dots, Thin-Film Transistor(TFT), Voltage sweep, gate insulator, hysteresis curve