상세정보
학술지
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
- 발행일
- 201307
- 출처
- Electronic Materials Letters, v.9 no.4, pp.467-469
- ISSN
- 1738-8090
- 출판사
- Springer, 대한금속재료학회
- 협약과제
- 12VB3700, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- 초록
- A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum dot film had a high optical transmittance of over 95% at 550 nm with a thickness of 50 nm. A large hysteresis curve was observed in a current-voltage measurement. When we increased the voltage sweep range, electrons were charged into the silicon quantum dots because of the electrical n-type channel in an oxide thin film transistor. © 2013 The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
- KSP 제안 키워드
- Current-Voltage measurements, Gate insulator, In-Situ, N-type, Non-Volatile Memory(NVM), Nonvolatile memory devices, Optical transmittance, Plasma-enhanced chemical vapor deposition(PECVD), Quantum Dot(QD), Silicon nitride film, Silicon quantum dots