상세정보
학술지
Metal-insulator Transition-induced Electrical Oscillation in Vanadium Dioxide Thin Film
- 발행일
- 200804
- 출처
- Applied Physics Letters, v.92 no.16, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 초록
- In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (V O2), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal V O2 thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the V O2 device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to <0.5 MHz. © 2008 American Institute of Physics.
- KSP 제안 키워드
- Correlated material, Electrical oscillation, Oscillation Frequency, Room-temperature, Strongly correlated, Vanadium dioxide thin film, Voltage source, electric circuit, metal-insulator transition, standard resistor, thin film(TF)