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Metal-insulator Transition-induced Electrical Oscillation in Vanadium Dioxide Thin Film
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- Authors
- Yong Wook Lee, Bong-Jun Kim, Jung-Wook Lim, Sun Jin Yun, Sung Youl Choi, Byung-Gyu Chae, Gyoung Ock Kim, Hyun-Tak Kim
- Issue Date
- 2008-04
- Citation
- Applied Physics Letters, v.92, no.16, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Project Code
- 08MB3100, New electronic device using electric current jump, Hyun-Tak Kim
- Abstract
- In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (V O2), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal V O2 thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the V O2 device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to <0.5 MHz. © 2008 American Institute of Physics.
- KSP Keywords
- Correlated material, Electrical oscillation, Oscillation Frequency, Room-temperature, Strongly correlated, Vanadium dioxide thin film, Voltage source, electric circuit, metal-insulator transition, standard resistor, thin film(TF)