상세정보
학술지
Thin-film Passivation by Atomic Layer Deposition for Organic Field-effect Transistors
- 저자
- 전하영, 신권우, 양찬우, 박찬언, 박상희
- 발행일
- 200810
- 출처
- Applied Physics Letters, v.93 no.16, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- The thin-film passivation of organic field-effect transistors (OFETs) using Al Ox films grown by atomic layer deposition was investigated. A high-quality Al Ox passivation layer was deposited on OFETs at 90 °C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm -thick Al Ox passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g m2 day. In addition, the mobility of the Al Ox -passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. © 2008 American Institute of Physics.
- KSP 제안 키워드
- Atomic Layer Deposition, Electric performance, Field-effect transistors(FETs), High-quality, Low water, Organic field-effect, barrier properties, low deposition temperature, passivation layer, thin film(TF), thin-film passivation