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Journal Article
Thin-film Passivation by Atomic Layer Deposition for Organic Field-effect Transistors
- Authors
- Ha Young Jeon, Kwon Woo Shin, Chan Woo Yang, Chan Eon Park, Sang-Hee Ko Park
- Issue Date
- 2008-10
- Citation
- Applied Physics Letters, v.93, no.16, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- The thin-film passivation of organic field-effect transistors (OFETs) using Al Ox films grown by atomic layer deposition was investigated. A high-quality Al Ox passivation layer was deposited on OFETs at 90 °C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm -thick Al Ox passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g m2 day. In addition, the mobility of the Al Ox -passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. © 2008 American Institute of Physics.
- KSP Keywords
- Atomic Layer Deposition, Electric performance, Field Effect Transistor(FET), High-quality, Low deposition temperature, Low water, Organic field-effect transistor(OFET), Water vapor transmission rate, barrier properties, passivation layer, thin film(TF)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
