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Journal Article
Thin-film Passivation by Atomic Layer Deposition for Organic Field-effect Transistors
- Authors
- Ha Young Jeon, Kwon Woo Shin, Chan Woo Yang, Chan Eon Park, Sang-Hee Ko Park
- Issue Date
- 2008-10
- Citation
- Applied Physics Letters, v.93, no.16, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- The thin-film passivation of organic field-effect transistors (OFETs) using Al Ox films grown by atomic layer deposition was investigated. A high-quality Al Ox passivation layer was deposited on OFETs at 90 °C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm -thick Al Ox passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g m2 day. In addition, the mobility of the Al Ox -passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. © 2008 American Institute of Physics.
- KSP Keywords
- Atomic Layer Deposition, Barrier properties, Electric performance, Field Effect Transistor(FET), High-quality, Low deposition temperature, Low water, Organic field-effect transistor(OFET), Water vapor transmission rate, passivation layer, thin film(TF)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY NC ND)
(CC BY NC ND)
