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학술대회
Novel Oxide Thin Film Transistors for Transparent AMOLED
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- 발행일
- 200810
- 출처
- International Meeting on Information Display (IMID) 2008, pp.1101-1104
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We have fabricated the transparent TFTs using new oxide material (AZTO: Al-doped zinc tin oxide) as an active layer. The AZTO TFT showed good performance without post-annealing. The electrical characteristics were improved by the post-annealing up to 300 °C. The AZTO TFTs exhibited a mobility of 8~12 cm2/Vs, a subthreshold swing of 0.2~0.6 V/dec, and an on/off ratio of more than 109.
- KSP 제안 키워드
- Active Layer, Al-doped, Oxide material, Oxide thin films, Post-annealing, Thin-Film Transistor(TFT), Zinc tin oxide, electrical characteristics, on/off ratio, subthreshold swing(SS), thin film(TF)