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Antimony Selenide Phase-Change Nanowires for Memory Application
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- Authors
- Soon-Won Jung, Sung-Min Yoon, In-Kyu You, Byoung-Gon Yu, Kyung-Wan Koo
- Issue Date
- 2011-02
- Citation
- Journal of Nanoscience and Nanotechnology, v.11, no.2, pp.1569-1572
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalystfree approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (~10 M廓) and low-resistance (~1 k廓) states which are attributed to amorphous and crystalline states, respectively. Copyright © 2011 American Scientific Publishers All rights reserved.
- KSP Keywords
- Antimony selenide, Device characteristics, High purity, Memory applications, Phase change, Phase transition, Single-crystalline