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Journal Article Antimony Selenide Phase-Change Nanowires for Memory Application
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Authors
Soon-Won Jung, Sung-Min Yoon, In-Kyu You, Byoung-Gon Yu, Kyung-Wan Koo
Issue Date
2011-02
Citation
Journal of Nanoscience and Nanotechnology, v.11, no.2, pp.1569-1572
ISSN
1533-4880
Publisher
American Scientific Publishers (ASP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1166/jnn.2011.3385
Abstract
Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalystfree approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (~10 M廓) and low-resistance (~1 k廓) states which are attributed to amorphous and crystalline states, respectively. Copyright © 2011 American Scientific Publishers All rights reserved.
KSP Keywords
Antimony selenide, Device characteristics, High purity, Memory applications, Phase change, Phase transition, Single-crystalline