상세정보
학술지
Antimony Selenide Phase-Change Nanowires for Memory Application
- 발행일
- 201102
- 출처
- Journal of Nanoscience and Nanotechnology, v.11 no.2, pp.1569-1572
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 초록
- Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalystfree approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (~10 M廓) and low-resistance (~1 k廓) states which are attributed to amorphous and crystalline states, respectively. Copyright © 2011 American Scientific Publishers All rights reserved.
- KSP 제안 키워드
- Antimony selenide, Device characteristics, High-purity, Memory applications, Phase change, Phase transition, Single-crystalline