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Sputtered Silicon Antimony Thin Film for The Infrared Detection Layer of Microbolometer
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- Authors
- Hojun Ryu, Se In Kwon, Sang Hoon Cheon, Seong Mok Cho, Woo Seok Yang, Byoung Gon Yu, Chang Auck Choi, Myung Lae Lee
- Issue Date
- 2008-10
- Citation
- SENSORS 2008, pp.301-304
- Language
- English
- Type
- Conference Paper
- Abstract
- We have studied on the sputtered silicon antimony thin film for bolometric materials of mid-IR range application. In order to obtain high detectivity of infrared sensors, the infrared detection materials which have been using today as a resistor must have a high temperature coefficient of resistance (TCR) and low noise. We fabricated silicon films and their alloy films by sputtering and plasma-enhanced chemical vapor deposition. PECVD deposited silicon film has been found to exhibit high level of 1/f noise but having reasonable TCR. On the other hand silicon antimony alloy films have a good TCR comparing to the VO2 and very low levels of 1/f noise than PECVD Si films. Moreover the silicon antimony films have low resistivity and been expected to be the best CMOS compatible material for a high performance microbolometer having high TCR and low 1/f noise. © 2008 IEEE.