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Journal Article 125 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode
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Authors
Jong-Bum You, Mi Ran Park, Jeong-Woo Park, Gyung Ock Kim
Issue Date
2008-10
Citation
Optics Express, v.16, no.22, pp.18340-18344
ISSN
1094-4087
Publisher
Optical Society of America(OSA)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1364/OE.16.018340
Abstract
We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3 dB bandwidth of ~8 GHz and the data transmission up to 12.5Gbit/s. ©2008 Optical Society of America.
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