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Journal Article
125 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode
- Authors
- Jong-Bum You, Mi Ran Park, Jeong-Woo Park, Gyung Ock Kim
- Issue Date
- 2008-10
- Citation
- Optics Express, v.16, no.22, pp.18340-18344
- ISSN
- 1094-4087
- Publisher
- Optical Society of America(OSA)
- Language
- English
- Type
- Journal Article
- Abstract
- We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3 dB bandwidth of ~8 GHz and the data transmission up to 12.5Gbit/s. ©2008 Optical Society of America.
- KSP Keywords
- 25 Gbps, 3-dB bandwidth, Bending loss, Carrier depletion, Data transmission, Depletion effect, High Speed, ON/OFF ratio, Optical modulation, PN diode, Petri net(PN)
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
