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Conference Paper
Top Gate ZnO-TFT Driving AM-OLED Fabricated on a Plastic Substrate
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- Authors
- Chi-Sun Hwang, Sang-Hee Ko Park, Chun Won Byun, Min Ki Ryu, Shin Hyuk Yang, Jeong Ik Lee, Sung Mook Chung, Gi Heon Kim, Seung Youl Kang, Hye Yong Chu
- Issue Date
- 2008-10
- Citation
- International Meeting on Information Display (IMID) 2008, pp.1466-1469
- Language
- English
- Type
- Conference Paper
- Abstract
- We have fabricated 2.5 inch QQCIF AM-OLED panel driven by ZnO-TFT on a plastic substrate for the first time. The number of photo mask for the whole panel process was 5 and the TFT structure was top gate with active protection layer as a first gate insulator. Optimizing the process for the substrate buffer layer, active layer, ZnO protection layer, and gate insulator was key factor to achieve the TFT performance enough to drive OLED. The ZnO TFT has mobility of 5.4 cm2/V.s, turn on voltage of -6.8 V, sub-threshold swing of 0.39 V/decade, and on/off ratio of 1.7×1O9. Although whole process temperature is below 150°C to be suitable for the plastic substrate, performance of ZnO TFT was comparable to that fabricated at higher temperature on the glass.