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Journal Article
Characteristics of W- and Ti-Doped VO2 Thin Films Prepared by Sol-Gel Method
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- Authors
- B. G. Chae, H. T. Kim, S. J. Yun
- Issue Date
- 2008-04
- Citation
- Electrochemical and Solid-State Letters, v.11, no.6, pp.D53-D55
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- W- and Ti-doped V O2 thin films were deposited onto sapphire by the sol-gel method. Both films were grown with (020)-preferred direction. Doping of W had a great effect on the transition behaviors. A 1.2 atom % W-doped V O2 film showed a largely reduced resistance in the insulator state and decreased the transition temperature to 313 K. However, Ti-doped V O2 film had a little change of the transition temperature, and it was 350 K, even for the 20 atom % Ti doping. The resistance in the metal state was very large, which means a markedly small change of the resistance at the transition temperature. Further study is required for understanding the effects of doping V O2 film with metal ions. © 2008 The Electrochemical Society.
- KSP Keywords
- Metal ion, Metal state, Small change, Ti doping, Ti-doped, W-doped, sol-gel method, thin film(TF), transition temperature