상세정보
학술지
Preparation of Anodic Aluminum Oxide Templates on Silicon Substrates for Growth of Ordered Nano-dot Arrays
- 발행일
- 200901
- 출처
- Current Applied Physics, v.9 no.1, pp.S101-S103
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 협약과제
- 07MB1400, THz파 발진 변환 검출기 및 신호원, 강광용
- 초록
- We have investigated anodic aluminum oxide (AAO) templates on silicon substrates for growth of ordered nano-dot arrays. An AAO template having pores of average diameter 60 nm and height 200 nm was successfully prepared by two-step anodic oxidation of an aluminum film on a silicon substrate. Optimum conditions of the process variables such as annealing time of the as-sputtered aluminum, temperature of the electrolyte solution, and the anodic potential have been experimentally determined. We have obtained silicon-wafer scale AAO templates of ordered arrays with easy handling, and have grown GaAs and GaN nano-dot arrays using the templates by MBE. © 2008 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- Aluminum film, Annealing time, Anodic potential, Average diameter, Electrolyte solution, Nano-dot, Optimum condition, Ordered arrays, Process variables, Silicon substrate, Two-Step