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Journal Article Preparation of Anodic Aluminum Oxide Templates on Silicon Substrates for Growth of Ordered Nano-dot Arrays
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Authors
S.Y. Jeong, M.C. An, Y.S. Cho, D.J. Kim, M.C. Paek, K.Y. Kang
Issue Date
2009-01
Citation
Current Applied Physics, v.9, no.1, pp.S101-S103
ISSN
1567-1739
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.cap.2008.08.030
Abstract
We have investigated anodic aluminum oxide (AAO) templates on silicon substrates for growth of ordered nano-dot arrays. An AAO template having pores of average diameter 60 nm and height 200 nm was successfully prepared by two-step anodic oxidation of an aluminum film on a silicon substrate. Optimum conditions of the process variables such as annealing time of the as-sputtered aluminum, temperature of the electrolyte solution, and the anodic potential have been experimentally determined. We have obtained silicon-wafer scale AAO templates of ordered arrays with easy handling, and have grown GaAs and GaN nano-dot arrays using the templates by MBE. © 2008 Elsevier B.V. All rights reserved.
KSP Keywords
Aluminum film, Annealing time, Anodic potential, Average diameter, Electrolyte solution, Nano-dot, Optimum condition, Ordered arrays, Process variables, Silicon substrate, Two-Step