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Journal Article Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature
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Authors
Doo-Hee Cho, Shin Hyuk Yang, Chun Won Byun, Jae Heon Shin, Min Ki Ryu, Sang-Hee Ko Park, Chi-Sun Hwang, Sung Mook Chung, Woo-Seok Cheong, Sung Min Yoon, Hye-Yong Chu
Issue Date
2008-10
Citation
Applied Physics Letters, v.93, no.14, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.2998612
Project Code
08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
Abstract
We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 10 9. © 2008 American Institute of Physics.
KSP Keywords
Active Layer, Al-Zn, Al-doped, Bottom gate, Low temperature(LT), Room-temperature, Thin-Film Transistor(TFT), Turn-on voltage, Zinc tin oxide, Zn-Sn-O(ZTO), field-effect mobility