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학술지 Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature
Cited 149 time in scopus Download 1 time Share share facebook twitter linkedin kakaostory
저자
조두희, 양신혁, 변춘원, 신재헌, 유민기, 박상희, 황치선, 정승묵, 정우석, 윤성민, 추혜용
발행일
200810
출처
Applied Physics Letters, v.93 no.14, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.2998612
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 10 9. © 2008 American Institute of Physics.
KSP 제안 키워드
Active Layer, Al-Zn, Al-doped, Bottom gate, Low temperature(LT), Room-temperature, Thin-Film Transistor(TFT), Turn-on voltage, Zinc tin oxide, Zn-Sn-O(ZTO), field-effect mobility