상세정보
학술지
Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature
- 발행일
- 200810
- 출처
- Applied Physics Letters, v.93 no.14, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (S/S) of 0.6 V/decade, and an on/off ratio (Ion/Ioff) of 10 9. © 2008 American Institute of Physics.
- KSP 제안 키워드
- Active Layer, Al-Zn, Al-doped, Bottom gate, Low temperature(LT), Room-temperature, Thin-Film Transistor(TFT), Turn-on voltage, Zinc tin oxide, Zn-Sn-O(ZTO), field-effect mobility