상세정보
학술지
Polishing Damages to Electrical Properties of BLT Thin Film Capacitors Fabricated by Damascene Process
- 저자
- 김남훈, 정판금, 신상헌, 김준형, 이현용, 이우선
- 발행일
- 200811
- 출처
- Electronics Letters, v.44 no.24, pp.1-2
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 08MT1100, 광통신부품 개발기술지원, 유정희
- 초록
- Polishing pressure in the damascene process for BLT thin films improves the removal rate and surface roughness; however, the electrical properties of BLT capacitors fabricated by the damascene process with high pressure worsened. Therefore, low pressure was suitable for BLT capacitors fabricated by the damascene process when considering the electrical properties. © The Institution of Engineering and Technology 2008.
- KSP 제안 키워드
- BLT thin films, Damascene process, Film capacitors, Removal rate, Surface roughness, electrical properties(I-V curve), high-pressure, low pressure, thin film(TF)