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Polishing damages to electrical properties of BLT thin-film capacitors fabricated by damascene process
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- Authors
- N.-H. Kim, P.-G. Jung, S.-H. Shin, J.-H. Kim, H.-Y. Lee, W.-S. Lee
- Issue Date
- 2008-11
- Citation
- Electronics Letters, v.44, no.24, pp.1-2
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- Polishing pressure in the damascene process for BLT thin films improves the removal rate and surface roughness; however, the electrical properties of BLT capacitors fabricated by the damascene process with high pressure worsened. Therefore, low pressure was suitable for BLT capacitors fabricated by the damascene process when considering the electrical properties. © The Institution of Engineering and Technology 2008.
- KSP Keywords
- BLT thin films, Damascene process, Removal rate, Surface roughness, Thin-film capacitors, electrical properties(I-V curve), high-pressure, low pressure, thin film(TF)